Coexisting ferroelectricity and Chern insulators have been achieved using a doubly aligned magic-angle twisted bilayer graphene device. This device enables selective switching of topologically protected edge states and quasi-continuous ferroelectric levels that can support noise-immune neuromorphic computing applications.
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References
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Andrei, E. Y. et al. The marvels of moiré materials. Nat. Rev. Mater. 6, 201–206 (2021). A review article on moiré materials.
Yan, X. et al. Moiré synaptic transistor with room-temperature neuromorphic functionality. Nature 624, 551–556 (2023). This paper reports a moiré synaptic transistor based on graphene/hBN heterostructures.
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This is a summary of: Chen, M. et al. Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing. Nat. Nanotechnol. https://doi.org/10.1038/s41565-024-01698-y (2024).
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Topologically protected edge states for neuromorphic computing. Nat. Nanotechnol. (2024). https://doi.org/10.1038/s41565-024-01700-7
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DOI: https://doi.org/10.1038/s41565-024-01700-7