Extended Data Fig. 7: Extraction of contact resistance.
From: Monolithic three-dimensional tier-by-tier integration via van der Waals lamination
![Extended Data Fig. 7](https://cdn.statically.io/img/media.springernature.com/full/springer-static/esm/art%3A10.1038%2Fs41586-024-07406-z/MediaObjects/41586_2024_7406_Fig11_ESM.jpg)
a, Transfer curves of monolayer MoS2 transistor fabricated by one-step vdW integration with different channel lengths. b, Extracted contact resistance through transfer length method.