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Topologically protected edge states for neuromorphic computing

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Coexisting ferroelectricity and Chern insulators have been achieved using a doubly aligned magic-angle twisted bilayer graphene device. This device enables selective switching of topologically protected edge states and quasi-continuous ferroelectric levels that can support noise-immune neuromorphic computing applications.

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Fig. 1: Selective switching of ferroelectric Chern insulator devices.

References

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This is a summary of: Chen, M. et al. Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing. Nat. Nanotechnol. https://doi.org/10.1038/s41565-024-01698-y (2024).

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Topologically protected edge states for neuromorphic computing. Nat. Nanotechnol. (2024). https://doi.org/10.1038/s41565-024-01700-7

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