Extended Data Fig. 1: Cross-sectional transmission electron microscopy (TEM) bright field (BF) and high-angle annular dark-field (HAADF) images of the NFPCM in the set state.
From: Phase-change memory via a phase-changeable self-confined nano-filament
![Extended Data Fig. 1](https://cdn.statically.io/img/media.springernature.com/full/springer-static/esm/art%3A10.1038%2Fs41586-024-07230-5/MediaObjects/41586_2024_7230_Fig5_ESM.jpg)
a. An illustration of the NFPCM with the normal forming condition. b. The TEM BF image of the NFPCM, formed with the normal forming condition. c. The TEM HAADF image exhibiting a highly confined filament is formed in the a-Si layer with approximately 5.5 nm of diameter. d. An illustration of the NFPCM with the aggressive forming condition to form a thick filament. e. The TEM BF image of the NFPCM, formed with the aggressive forming condition. f. The TEM HAADF image of a thick filament in the a-Si layer. Since heavier Te atoms appear brighter than lighter Si atoms in the HAADF image, c and f indicate that the Te atoms are inserted into the a-Si layer and form a SiTex filament. Detailed explanations about forming strategies are provided in the Methods section.