Extended Data Fig. 9: The set and reset switching speeds of the NFPCM fabricated on the 40 nm BEC.
From: Phase-change memory via a phase-changeable self-confined nano-filament
![Extended Data Fig. 9](https://cdn.statically.io/img/media.springernature.com/full/springer-static/esm/art%3A10.1038%2Fs41586-024-07230-5/MediaObjects/41586_2024_7230_Fig13_ESM.jpg)
To analyze the switching speeds of the NFPCM with a scaled device size, the device is fabricated on the BEC having 40 nm of diameter (W/Te/a-Si/BEC). a. The set speed of the 40 nm NFPCM measured by applying set pulses (3.5 V) with various widths from 100 to 5,000 ns, showing a fast set speed of ~150 ns. b. The reset speed of the NFPCM measured by applying reset pulses (6.5 V) with various widths from 20 to 1,000 ns, showing a fast reset speed of less than 20 ns. The results show that the switching speed of the 40 nm device is similar to the 5 μm device. Since the forming process is barely affected by the device size, the device characteristics can also be independent of the device size.