Extended Data Fig. 8: Device resistance versus temperature curves with and without the NB process.
From: Phase-change memory via a phase-changeable self-confined nano-filament
a. The device resistance versus temperature curve for the NFPCM without NB process, showing 439 K of a glass transition temperature (Tg) which corresponds to Si ~25% and Te ~75% alloy39. b. The device resistance versus temperature curve for the NFPCM with the NB process, showing increased Tg of 470 K, which corresponds to the Si ~29% and Te ~71% alloy. Because the Tg of the Si-Te system increases as the atomic percentage of the Te decreases, the results reveal that the NB process generates the Te-deficient SiTex filament (29% of Si and 71% of Te) compared to the filament without the NB process (25% of Si and 75% of Te).