Extended Data Fig. 7: The set and reset switching speeds of the 5 μm NFPCM with various pulse widths.
From: Phase-change memory via a phase-changeable self-confined nano-filament
a. The set speed of the NFPCM measured by applying set pulses (3.5 V) with various widths from 100 to 5,000 ns to the device in a high resistance state (HRS), showing a fast set speed of ~150 ns. b. The reset speed of the NFPCM measured by applying reset pulses (7 V) with various widths from 20 to 1,000 ns to the device in a low resistance state (LRS), showing a fast reset speed of less than 20 ns. It is noted that the switching speed, especially the set (crystallization) speed, is affected by several factors, such as the distance that atoms should travel to form crystals and the existence of crystal seeds promoting the nucleation speed. Therefore, modification of the switching speed could be possible through material variations.