Extended Data Fig. 2: Fabrication processes of TaIrTe4 devices.
From: Dual quantum spin Hall insulator by density-tuned correlations in TaIrTe4
a,b, Schematic and corresponding fabrication processes for Design-I (a) and Design-II (b) bottom structures. c, Fabrication processes of the top structure (involving TaIrTe4 and top gate) conducted inside an argon-glovebox. Scale bars: 10 μm.