Extended Data Fig. 5: Nonlocal measurements without edge contribution.
From: Dual quantum spin Hall insulator by density-tuned correlations in TaIrTe4
![Extended Data Fig. 5](https://cdn.statically.io/img/media.springernature.com/full/springer-static/esm/art%3A10.1038%2Fs41586-024-07211-8/MediaObjects/41586_2024_7211_Fig10_ESM.jpg)
a, An optical image of device D3 with half of its boundaries covered by BN. Scale bar: 10 μm. b, Device schematic and contact labelling. c, Plots of local and nonlocal voltages versus carrier density n. The current was injected from Contact 10 to 7 (Ixx = 100 nA), and the voltages were measured between Contact 9 and 8 (VL) and between Contact 11 and 12 (VNL).