Extended Data Fig. 1: Patterning of M-CNT electrodes using metal-assisted lift off method.
From: High-speed and large-scale intrinsically stretchable integrated circuits
a, Schematic diagram showing the process of making PMMA/metal stack structures. Cu was used for the metal layer because of its low cost and wide use in the industry manufacturing of commercial electronics. The thicknesses of PMMA, metal and photoresist are about 400 nm, 150 nm and 1.2 μm, respectively. b, Optical microscope image of the fabricated PMMA/Cu stack structures with different gap sizes. The channel length will be defined by the gap size and the minimal gap can be smaller than 1 μm. c, Optical microscope image of M-CNT electrodes with different channel lengths. d, Photo showing the lift-off procedure for patterning M-CNT electrodes. M-CNT on the metal is removed cleanly from the substrate together with the metal, when PMMA film underneath is dissolved in acetone.