Extended Data Fig. 5: Comparison of contact resistance w/ and w/o Pd interface layer.
From: High-speed and large-scale intrinsically stretchable integrated circuits
a, Device structure of transistors w/o Pd. b, Device structure of transistors w/ Pd. c, Transfer curves of transistors with different channel length w/o Pd. Vds = −1.0 V. d, Transfer curves of transistors with different channel lengths w/ Pd. Vds = −1.0 V. e, Extraction of contact resistance of transistors w/o Pd. f, Extraction of contact resistance of transistors w/ Pd. Data from four transistors were averaged for each Lch.