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Substitutional doping in 2D transition metal dichalcogenides

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Abstract

Two-dimensional (2D) van der Waals transition metal dichalcogenides (TMDs) are a new class of electronic materials offering tremendous opportunities for advanced technologies and fundamental studies. Similar to conventional semiconductors, substitutional doping is key to tailoring their electronic properties and enabling their device applications. Here, we review recent progress in doping methods and understanding of doping effects in group 6 TMDs (MX2, M = Mo, W; X = S, Se, Te), which are the most widely studied model 2D semiconductor system. Experimental and theoretical studies have shown that a number of different elements can substitute either M or X atoms in these materials and act as n- or p-type dopants. This review will survey the impact of substitutional doping on the electrical and optical properties of these materials, discuss open questions, and provide an outlook for further studies.

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Acknowledgements

The authors acknowledge support from the Ministry of Education (MOE), Singapore, under AcRF Tier 3 (MOE2018-T3-1-005) and the Singapore National Research Foundation for funding the research under medium-sized centre programme. M. B. acknowledges support from MOE’s AcRF Tier 1 (R-284-000-179-133).

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  1. Leyi Loh and Zhepeng Zhang contributed equally to this work.

Authors and Affiliations

  1. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore

    Leyi Loh, Zhepeng Zhang & Goki Eda

  2. Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore

    Leyi Loh & Michel Bosman

  3. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore

    Goki Eda

  4. Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 2, Singapore, 117542, Singapore

    Goki Eda

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  1. Leyi Loh
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Loh, L., Zhang, Z., Bosman, M. et al. Substitutional doping in 2D transition metal dichalcogenides. Nano Res. 14, 1668–1681 (2021). https://doi.org/10.1007/s12274-020-3013-4

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