Indium arsenide antimonide phosphide

The printable version is no longer supported and may have rendering errors. Please update your browser bookmarks and please use the default browser print function instead.

Indium arsenide antimonide phosphide (In As Sb P) is a semiconductor material.

InAsSbP has been used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes and lasers,^[1] photodetectors^[2] and thermophotovoltaic cells.^[3]

InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials.^[4]

References

^ Shur, Michael; Suris, R. A. (2020). Compound semiconductors 1996 : proceedings of the twenty-third International Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996. Boca Raton. p. 552. ISBN 978-1-000-15712-3. OCLC 1222799133.{{cite book}}: CS1 maint: location missing publisher (link)
^ Rogalski, Antoni (2011). Infrared detectors. Boca Raton, FL: CRC Press. p. 346. ISBN 978-1-4200-7672-1. OCLC 690115516.
^ Martí, Antonio; Luque, A. (2004). Next generation photovoltaics : high efficiency through full spectrum utilization. Bristol: Institute of Physics. p. 265. ISBN 978-1-4200-3386-1. OCLC 80745662.
^ Kuech, Tom (2014). Handbook of crystal growth. Vol. III, Thin films and epitaxy: basic techniques. Burlington: Elsevier Science. p. 267. ISBN 978-0-444-63305-7. OCLC 913620060.

This condensed matter physics-related article is a stub. You can help Wikipedia by expanding it.

[1] Shur, Michael; Suris, R. A. (2020). Compound semiconductors 1996 : proceedings of the twenty-third International Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996. Boca Raton. p. 552. ISBN 978-1-000-15712-3. OCLC 1222799133.{{cite book}}: CS1 maint: location missing publisher (link)

[2] Rogalski, Antoni (2011). Infrared detectors. Boca Raton, FL: CRC Press. p. 346. ISBN 978-1-4200-7672-1. OCLC 690115516.

[3] Martí, Antonio; Luque, A. (2004). Next generation photovoltaics : high efficiency through full spectrum utilization. Bristol: Institute of Physics. p. 265. ISBN 978-1-4200-3386-1. OCLC 80745662.

[4] Kuech, Tom (2014). Handbook of crystal growth. Vol. III, Thin films and epitaxy: basic techniques. Burlington: Elsevier Science. p. 267. ISBN 978-0-444-63305-7. OCLC 913620060.

[1]

v t e Arsenic compounds
Arsenides	AlAs BAs BiAs Cd₃As₂ CaAs CoAs DyAs HoAs GaAs InAs YAs LiAs MoAs₂ MnAs NpAs NpAs₂ PdAs₂ PrAs PuAs SmAs Na₃As TaAs WAs₂ YAs Zn₃As₂
As(III)	AsBr₃ AsCl₃ AsCl₅ AsF₃ AsH₃ AsI₃ As₂O₃ As₂S₃ As₂Se₃ As₄S₄ AsP
As(III,V)	As₂O₄
As(V)	AsF₅ AsCl₅ As₂O₅ As₂S₅

v t e Phosphorus compounds
Phosphides	AlP AsP BP BiP Cs₂P₅ Ca₃P₂ Cd₃P₂ Cu₃P DyP ErP EuP GdP AuP FeP Fe₃P HfP HoP InP LaP Li₃P LuP MoP MoP₂ Mo₃P NbP NdP NpP Np₃P₄ OsP₂ Ru₂P PtP₂ PrP PrP₅ PuP ScP SmP SmP₅ Sr₃P₂ TbP SnP₃ ThP₇ TmP YP YbP ZnP₂ Zn₃P₂ ZrP ZrP₂
Other compounds	PBr₃ PBr₅ PBr₇ PCl₃ PCl₅ P₂Cl₄ PF₃ PF₅ PI₃ PH₃ PN P₃N₅ PO P₂O₃ P₂O₄ P₂O₅ P₄S₃ P₄S_x P₄S₁₀

See also

References